■ Equipment Specifications :

• Exposure light source, mask line width replication capability, I-line positive
  photoresist 1um thickness, hard contact, 1um~2um, proximity 3um~5um.
   

■ Align the imaging system:

• Automatic alignment ability, the align key with clear geometric
  shape can be identified within 5um.

 

■ Productivity :

• In the alignment process, the output depends on the alignment accuracy and exposure time.
  The fastest approach exposure model can reach 5 pieces per minute.

• The pattern resolution of vacuum contact exposure is the best, within 1um, and the proximity
  exposure is set at about 5~10um according to the distance between the wafer and the mask.

 

■ External Dimensions Weight:

• W: 1900 x D1600 x H2400mm

 

■ Weight :

• Weight about 1700kg

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